Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
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  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND

Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND

65,32 €
С НДС
Monthly payment from 5.55€
Количество
Доступен, доставка 2-5 раб. дней

GoodRam
IRP-SSDPR-P44N-512-30

Характеристики

Height
2.2 mm
Width
22 mm
Depth
30 mm
Memory type
3D NAND
SSD Capacity
512 GB
Storage temperature (T-T)
-40 - 85 °C
Рабочая температура (ТТ)
0 - 70 °C
Интерфейс
PCI Express 4.0
Скорость записи
4600 MB/s
Скорость чтения
5100 MB/s
Среднее время между отказами (MTBF)
1500000 h
Форм-фактор SSD
M.2
NVMe
Yes
И Т. Д
Yes
Component for
Notebook/Game console
TBW rating
300
PCI Express interface data lanes
x4
Random write (4KB)
920000 IOPS
Controller type
Phison E21T
Random read (4KB)
780000 IOPS
M.2 SSD size
2230 (22 x 30 mm)
Maximum operating temperature
70 °C